Semiconductor memory cell and semiconductor memory device
AssigneeInfineon Technologies AG
InventorsGünter Schmid, Marcus Halik, Hagen Klauk, Christine Dehm, Thomas Haneder, Thomas Mikolajick
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Abstract
A semiconductor memory cell has a field-effect transistor device and a ferroelectric storage capacitor. The field-effect transistor device has a channel region that includes or is made of an organic semiconductor material. Besides a first gate electrode of the gate electrode configuration of the field-effect transistor device, an additional selection gate electrode is provided, by way of which the field-effect transistor device can be switched off without influencing the storage dielectric and independently of the first gate electrode.
Claims36
A semiconductor memory cell, comprising:
- a field-effect transistor device forming an access device, said field-effect transistor device having first and second source/drain regions, a channel region comprising an organic semiconductor material, between said first and second source/drain regions, and a gate electrode configuration;
- and
- a storage capacitor having a ferroelectric storage dielectric and at least one electrode forming a first gate electrode of said gate electrode configuration of said field-effect transistor device.
Dependencies are inferred from the claim text.