Semiconductor acceleration sensor
AssigneeAu Optronics Corporation
InventorChien-Sheng Yang
Life of this patent
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Abstract
A semiconductor acceleration sensor includesa non-single-crystal-silicon-based substrate, an insulating beam structure having a movable section and a stationary section, at least one piezoresistor positioned on the beam structure, an insulating supporter positioned on the non-single-crystal-silicon-based substrate for fixing the stationary section of the beam structure and forming a distance between the beam structure and the non-single-crystal-silicon-based substrate, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate and electrically connected to the piezoresistor and the beam structure.
Claims11
A semiconductor acceleration sensor comprising:
- a non-single-crystal-silicon-based substrate;
- an insulating beam structure having a movable section and a stationary section;
- at least one piezoresistor positioned on the beam structure;
- an insulating supporter positioned on the non-single-crystal-silicon-based substrate for fixing the stationary section of the beam structure and forming a distance between the beam structure and the non-single-crystal-silicon-based substrate;
- and
- a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate and electrically connected to the piezoresistor and the beam structure.
Dependencies are inferred from the claim text.