Semiconductor wafer and device for semiconductor device manufacturing process
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsKiyoshi Demizu, Tadahiro Kato, Shigeyoshi Netsu
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Abstract
In order to improve the productivity or production yield of chips in the process for device fabrication, the present invention provides a wafer or an apparatus of process for fabricating semiconductor devices having the backside of the wafer or the surface of a wafer holding means adjusted so as to have a distribution in contact surface density between the surface of the wafer holding means and the backside of the wafer when the semiconductor wafer is held on the wafer holding means in the process for fabricating devices.
Claims19
A semiconductor wafer having a roughness of a wafer backside surface varied in a direction of a radius, wherein varied sections exist substantially coaxially in the direction of the radius.
A semiconductor wafer having a roughness of a wafer backside surface varied in a direction of a radius, wherein sections of the different roughness exist at least in a peripheral part of the wafer and in arbitrary sections radially inward of the periphery.
A semiconductor wafer, which is held on a wafer holding means by a face to face contact of a whole backside surface of the wafer, having a contact surface density forming means of the backside surface of the wafer, the contact surface density forming means prepared so as to vary in a direction of a radius to have a varying contact surface density distribution in the direction of the radius with respect to the contact surface density of the backside surface of the wafer to the wafer holding means.
A method for processing a semiconductor wafer comprising polishing a backside of a wafer and providing a surface roughness of the wafer backside varying substantially coaxially in a direction of a radius by at least one process means not including a polishing process.
A method for processing a semiconductor wafer comprising forming an oxide film on a backside of a wafer, removing the oxide film partially by etching, and removing the residual oxide film by polishing a whole area of the wafer backside, whereby providing coaxially a roughness distribution approximately in a direction of a radius.
In an apparatus for fabricating semiconductor devices wherein a whole backside surface of a wafer is held by a wafer holding means by face to face contact to carry out device fabricating processes thereon, said apparatus for fabricating semiconductor devices comprising a means for adjusting a contact surface density at least on a surface of the wafer holding means, the backside surface of the wafer or a means for applying contact pressure between both surfaces so as to have varying contact surface densities between the wafer and the surface of the wafer holding means in a direction of the wafer diameter.
Dependencies are inferred from the claim text.