Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
AssigneeAdvantest Corporation
InventorsShinichi Hamaguchi, Takeshi Haraguchi, Hiroshi Yasuda
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Abstract
An electron beam exposure apparatus for exposing a wafer includes: a multi-axis electron lens operable to converge a plurality of electron beams independently of each other; and a lens-intensity adjuster including a substrate provided to be substantially parallel to the multi-axis electron lens, and a lens-intensity adjusting unit operable to adjust the lens intensity of the multi-axis electron lens applied to the electron beams passing through the lens openings, respectively.
Claims21
An electron beam exposure apparatus for exposing a wafer, comprising:
- a multi-axis electron lens operable to converge a plurality of electron beams independently of each other;
- and
- a lens-intensity adjuster including a substrate provided to be substantially parallel to said multi-axis electron lens, and a lens-intensity adjusting unit operable to adjust the lens intensity of said multi-axis electron lens applied to said electron beams passing through said lens openings, respectively.
A fabrication method of a semiconductor device on a wafer, comprising:
- performing focus adjustments for said plurality of electron beams independently of each other by a multi-axis electron lens having a plurality of lens openings for converging a plurality of electron beams independently of each other and a lens-intensity adjusting unit for adjusting a lens intensity of said multi-axis electron lens applied to said electron beams passing through said lens openings, said lens-intensity adjusting unit being provided on a substrate substantially parallel to said multi-axis electron lens;
- and
- exposing a pattern onto said wafer by illuminating said wafer with said plurality of electron beams.
Dependencies are inferred from the claim text.