Laser illumination apparatus

A method for forming a semiconductor device comprising:

• generating a laser light;
• shaping said laser light to a linear laser beam having a beam width W;
• irradiating said linear laser beam to a semiconductor film;
• and
• scanning said semiconductor film with said linear laser beam during the irradiation,
• wherein a condition Δ(r)≦W/20 is satisfied, where r is a height difference of a surface of said semiconductor film, Δ(r) is a variation amount of said beam width W as a function of said height difference r.

A method for forming a semiconductor device comprising:

• generating a laser light;
• shaping said laser light to a linear laser beam having a beam width W through an optical system;
• irradiating said linear laser beam to a semiconductor film;
• and
• scanning said semiconductor film with said linear laser beam during the irradiation,
• wherein a condition W/20≦rD/2F≦W/5 is satisfied, where r is a height difference of a surface of said semiconductor film, D is a dimension, in a direction perpendicular to a generatrix of a final lens, of a beam incident region of said final lens, and F is a distance between said generatrix of said final lens and said semiconductor film.

A method for forming a semiconductor device comprising:

• generating a laser light;
• shaping said laser light to a linear laser beam having a beam width W through an optical system;
• irradiating said linear laser beam to a semiconductor film;
• and
• scanning said semiconductor film with said linear laser beam during the irradiation,
• wherein a condition rD/2F≦W/20 is satisfied, where r is a height difference of a surface of said semiconductor film, D is a dimension, in a direction perpendicular to a generatrix of a final lens, of a beam incident region of said final lens, and F is a distance between said generatrix of said final lens and said semiconductor film.

A method for forming a semiconductor device comprising:

• forming a semiconductor film over a substrate;
• generating a laser light;
• shaping said laser light to a linear laser beam having a beam width W;
• irradiating said linear laser beam to said semiconductor film to crystallize said semiconductor film;
• scanning said semiconductor film with said linear laser beam during the irradiation;
• forming a gate insulating film over said semiconductor film after the irradiation;
• and
• forming a gate electrode over said gate insulating film,
• wherein a condition W/20≦Δ(r)≦W/5 is satisfied, where r is a height difference of a surface of said semiconductor film, Δ(r) is a variation amount of said beam width W as a function of said height difference r.

A method for forming a semiconductor device comprising:

• forming a semiconductor film over a substrate;
• generating a laser light;
• shaping said laser light to a linear laser beam having a beam width W;
• irradiating said linear laser beam to said semiconductor film to crystallize said semiconductor film;
• and
• scanning said semiconductor film with said linear laser beam during the irradiation;
• forming a gate insulating film over said semiconductor film after the irradiation;
• and
• forming a gate electrode over said gate insulating film,
• wherein a condition Δ(r)≦W/20 is satisfied, where r is a height difference of a surface of said semiconductor film, Δ(r) is a variation amount of said beam width W as a function of said height difference r.

A method for forming a semiconductor device comprising:

• forming a semiconductor film over a substrate;
• generating a laser light;
• shaping said laser light to a linear laser beam having a beam width W through an optical system;
• irradiating said linear laser beam to said semiconductor film to crystallize said semiconductor film;
• and
• scanning said semiconductor film with said linear laser beam during the irradiation;
• forming a gate insulating film over said semiconductor film after the irradiation;
• and
• forming a gate electrode over said gate insulating film;
• wherein a condition W/20≦rD/2F≦W/5 is satisfied, where r is a height difference of a surface of said semiconductor film, D is a dimension, in a direction perpendicular to a generatrix of a final lens, of a beam incident region of said final lens, and F is a distance between said generatrix of said final lens and said semiconductor film.

A method for forming a semiconductor device comprising:

• forming a semiconductor film over a substrate;
• generating a laser light;
• shaping said laser light to a linear laser beam having a beam width W through an optical system;
• irradiating said linear laser beam to said semiconductor film to crystallize said semiconductor film;
• and
• scanning said semiconductor film with said linear laser beam during the irradiation;
• forming a gate insulating film over said semiconductor film after the irradiation;
• and
• forming a gate electrode over said gate insulating film,
• wherein a condition rD/2F≦W/20 is satisfied, where r is a height difference of a surface of said semiconductor film, D is a dimension, in a direction perpendicular to a generatrix of a final lens, of a beam incident region of said final lens, and F is a distance between said generatrix of said final lens and said semiconductor film.