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US 6,787,693 B2Granted
Fast turn on/off photovoltaic generator for photovoltaic relay
AssigneeInternational Rectifier Corporation
InventorSteven C. Lizotte
Life of this patent
Estimating the term…
Abstract
A photovoltaic generator constructed on an SOI N− layer subdivided into a series of connected isolated tubs whereby the isolated tubs are subdivided by a matrix of trenched wells. A P+ junction is formed into the top surface of each well to define a photovoltaic generator junction for its respective well.
Claims16
A photovoltaic generator comprising an insulation support wafer;
- a layer of monocrystalline silicon of one conductivity type disposed atop and insulated from said support wafer;
- a dielectric barrier web extending through said layer of silicon and dividing said layer of silicon into a plurality of laterally separated wells;
- each of said wells containing a shallow diffusion of a second conductivity type, thereby to define a junction to produce an output voltage in response to the illumination of the surface of said photovoltaic generator;
- and a plurality of spaced trenched wells extending from the top surface through at least a portion of the full thickness of said layer of silicon.
1 more element
A photovoltaic generator comprising an insulation support wafer;
- a layer of monocrystalline silicon of one conductivity type disposed atop and insulated from said support wafer;
- a dielectric barrier web extending through said layer of silicon and dividing said layer of silicon into a plurality of laterally separated wells;
- each of said wells containing a shallow diffusion of a second conductivity type, thereby to define a junction to produce an output voltage in response to the illumination of the surface of said photovoltaic generator;
- and a plurality of spaced trenched wells formed from the bottom surface of the SOI silicon layer that do not extend through the entire silicon layer.
1 more element
Dependencies are inferred from the claim text.