Gap fill for high aspect ratio structures
AssigneeNovellus Systems, Inc.
InventorsAtiye Bayman, Md Sazzadur Rahman, Weijie Zhang, Bart van Schravendijk, Vishal Gauri, George D. Papasoulitotis, Vikram Singh
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Abstract
Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.
Claims24
A method of filling gaps on a semiconductor substrate, the method comprising
- providing a substrate in a process chamber of a high density plasma chemical vapor deposition reactor;
- introducing a process gas comprising hydrogen in an amount of at least about 200 sccm, based on a 200 millimeter substrate, into the process chamber, wherein the process gas is substantially free of noble gas;
- and
- applying a bias to the substrate, to thereby grow a dielectric film via high density plasma chemical vapor deposition on the semiconductor substrate, wherein the dielectric film fills gaps with a width of less than about 1.5 micrometer.
Dependencies are inferred from the claim text.