Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprising the steps of:

• forming a metal oxide film on a substrate using a raw material gas obtained by vaporizing a raw material containing an oxygen atom and a metal atom and without using a gas containing an oxygen atom except said raw material gas;
• and
• modifying the metal oxide film which is formed in the film-forming step, using a reactant which is different from said raw material gas,
• wherein the film-forming step and the film-modifying step are successively repeated two or more times, and
• wherein said raw material is Hf[OC(CH3)2CH2OCH3]4, and said metal oxide film is a film containing Hf.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a metal oxide film on a substrate using a raw material gas obtained by vaporizing a raw material containing an oxygen atom and a metal atom and without using a gas containing an oxygen atom except said raw material gas;
• and
• modifying the metal oxide film which is formed in the film-forming step, using a reactant which is different from said raw material gas,
• wherein the film-forming step and the film-modifying step are successively repeated two or more times, and
• wherein said metal atom is Hf, and said metal oxide film is a film containing Hf, and a film thickness of the metal oxide film which is formed in one film-forming step is 0.5 Å-30 Å.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a metal oxide film on a substrate using a raw material gas obtained by vaporizing a raw material containing an oxygen atom and a metal atom and without using a gas containing an oxygen atom except said raw material gas;
• and
• modifying the metal oxide film which is formed in the film-forming step, using a reactant which is different from said raw material gas,
• wherein the film-forming step and the film-modifying step are successively repeated in a same reaction chamber two or more times,
• wherein the raw material gas supplied to the substrate in said film-forming step and the reactant supplied to the substrate in said film-modifying step are supplied through different supply ports, respectively,
• wherein, when the raw material gas is supplied to the substrate through the supply port for the raw material gas in the film-forming step, a nonreactive gas is supplied to the supply port for the reactant, and
• wherein, when the reactant is supplied to the substrate through the supply port for the reactant in the film-modifying step, a nonreactive gas is supplied to the supply port for the raw material gas.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a metal oxide film on a substrate using a raw material gas obtained by vaporizing a raw material containing an oxygen atom and a metal atom and without using a gas containing an oxygen atom except said raw material gas;
• and
• modifying the metal oxide film which is formed in the film-forming step, using a reactant which is different from said raw material gas,
• wherein the film-forming step and the film-modifying step are successively repeated in a same reaction chamber two or more times,
• wherein, when the raw material gas is supplied to the substrate in said film-forming step, the reactant used in the film-modifying step is exhausted without stopping the supply of the reactant such that the reactant bypasses the reaction chamber, and
• wherein, when the reactant is supplied to the substrate in said film-modifying step, the raw material gas used in the film-forming step is exhausted without stopping the supply of the raw material gas such that the raw material gas bypasses the reaction chamber.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a metal oxide film on a substrate using a raw material gas obtained by vaporizing a raw material containing an oxygen atom and a metal atom and without using a gas containing an oxygen atom except said raw material gas;
• and
• modifying the metal oxide film which is formed in the film-forming step, using a reactant which is different from said raw material gas,
• wherein the film-forming step and the film-modifying step are successively repeated in a same reaction chamber two or more times, and
• wherein an exhaust line for exhausting an interior of the reaction chamber in the film-forming step and an exhaust line for exhausting the interior of the reaction chamber in the film-modifying step are provided with a trap for use shared between both the steps.

A method for manufacturing a semiconductor device the steps of:

• forming a metal oxide film on a substrate using a raw material gas obtained by vaporizing a raw material containing an oxygen atom and a metal atom and without using a gas containing an oxygen atom except said raw material gas;
• modifying the metal oxide film which is formed in the film-forming step, using a reactant which is different from said raw material gas,
• wherein the film-forming step and the film-modifying step are successively repeated in a same reaction chamber two or more times;
• and
• a cleaning step,
• wherein the cleaning step is a step of removing a film which adheres to an inside of the reaction chamber using a cleaning gas which is activated by plasma,
• wherein the reactant used in the film-modifying step is a gas which is activated by plasma, and
• wherein a plasma source used for activating the gas in the film-modifying step and a plasma source used for activating the cleaning gas in the cleaning step are one plasma source shared with both the steps.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a metal oxide film on a substrate using a raw material gas obtained by vaporizing a raw material containing an oxygen atom and a metal atom and without using a gas containing an oxygen atom except said raw material gas;
• and
• modifying the metal oxide film which is formed in the film-forming step, using a reactant which is different from said raw material gas,
• wherein the film-forming step and the film-modifying step are successively repeated two or more times, and
• wherein said film-forming step and/or said film-modifying step is performed while rotating the substrate.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a metal oxide film on a substrate using a raw material gas obtained by vaporizing a raw material containing an oxygen atom and a metal atom and without using a gas containing an oxygen atom except said raw material gas;
• modifying the metal oxide film which is formed in the film-forming step, using a reactant which is different from said raw material gas,
• wherein the film-forming step and the film-modifying step are successively repeated in a same reaction chamber two or more times;
• transferring the substrate from the reaction chamber via a transfer chamber to a different reaction chamber without exposing the substrate to an ambient atmosphere after forming the metal oxide film on the substrate by repeating the film-forming step and the film-modifying step;
• and
• forming in the different reaction chamber an electrode on the metal oxide film formed on the substrate,
• wherein, after forming the metal oxide film, the electrode is formed without performing an annealing step as a different step from the electrode formation step, and
• wherein the steps from the metal oxide film formation to the electrode formation are performed in a same apparatus.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a film containing Hf on a substrate using a raw material gas obtained by vaporizing a raw material containing Hf;
• and
• modifying the film containing Hf which is formed in the film-forming step, using a reactant which is different from said raw material gas,
• wherein the film-forming step and the film-modifying step are successively repeated two or more times.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a thin film on a substrate by supplying a film formation gas to the substrate;
• modifying the thin film which is formed in the film-forming step, by supplying a reactant which is different from said film formation gas;
• transferring the substrate from the reaction chamber via a transfer chamber to a different reaction chamber without exposing the substrate to an ambient atmosphere;
• and
• forming in the different reaction chamber an electrode on the thin film formed on the substrate,
• wherein, after forming a thin film on the substrate by successively repeating in a same reaction chamber the film-forming step and the film-modifying step two or more times, the substrate transfer step and the electrode formation step are performed, and
• wherein, after forming the thin film by repeating the film-forming step and the film-modifying step two or more times, the electrode is formed without performing an annealing step as a different step from the electrode formation step, and
• wherein the steps from the thin film formation to the electrode formation are performed in a same apparatus.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a metal oxide film on a substrate using a raw material gas obtained by vaporizing a raw material containing an oxygen atom and a metal atom and without using a gas containing an oxygen atom except said raw material gas;
• and
• modifying the metal oxide film which is formed in the film-forming step, using a reactant which is different from said raw material gas,
• wherein said metal atom is Hf, and said metal oxide film is a film containing Hf.