Manufacturing method of semicondcutor device
AssigneeNEC Corporation
InventorsHidemitsu Aoki, Hiroaki Tomimori, Norio Okada, Tatsuya Usami, Koichi Ohto, Takamasa Tanikuni
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Abstract
In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.
Claims3
A method of manufacturing a semiconductor device;
- which comprises the steps of:
- forming a copper-containing film on a semiconductor substrate;
- removing, with a cleaning agent, a copper oxide on a surface of said copper-containing film;
- applying a nitriding treatment to the surface of said copper-containing film from which the copper oxide has been removed;
- and
- forming a copper-diffusion prevention film comprising a silicon on said copper-containing film which has been subjected to the nitriding treatment.
Dependencies are inferred from the claim text.