Methods of forming dielectric layers and methods of forming capacitors

A method of forming a capacitor comprising:

• treating an internal surface of a chemical vapor deposition reactor with a gas plasma generated from a source gas comprising fluorine sufficient to leave some residual activated fluorine thereover;
• after said treating, placing a first capacitor plate layer within the chemical vapor deposition reactor;
• and
• chemical vapor depositing a dielectric layer over the first capacitor plate layer comprising at least some fluorine from the activated fluorine over the substrate.

A method of forming a dielectric layer in a chemical vapor deposition reactor comprising:

• generating a fluorine-comprising gas plasma having activated fluorine therein;
• disposing some of the activated fluorine over at least a surface portion of an interior of the reactor;
• and
• chemical vapor depositing a dielectric layer within the reactor and dislodging at least some of the activated fluorine from the surface portion to incorporate at least some fluorine of the activated fluorine in the dielectric layer.

A method of forming a dielectric layer using a chemical vapor deposition reactor comprising:

• generating a fluorine-comprising gas plasma having activated fluorine therein;
• disposing some of the activated fluorine over at least a surface portion of an interior of the reactor;
• and
• chemical vapor depositing a dielectric layer comprising tantalum pentoxide within the reactor and dislodging at least some of the activated fluorine from the surface portion to incorporate at least some fluorine of the activated fluorine in the dielectric layer.

A method of forming a dielectric layer comprising:

• providing a chemical vapor deposition reactor having an internal surface;
• treating the internal surface with a gas plasma generated from a source gas comprising NF3 sufficient to leave some residual activated fluorine thereover;
• and
• after said treating, exposing an interior of the reactor to chemical vapor depositing conditions in the absence of the gas plasma effective to form a dielectric layer comprising fluorine from the residual fluorine, wherein at least some of the residual fluorine comprises activated fluorine which is present during the chemical vapor depositing of the dielectric layer and wherein the dielectric layer comprises between about 0.001% and 10% by weight of fluorine.