Etch stop layer for etching FinFET gate over a large topography
AssigneeAdvanced Micro Devices, Inc.
InventorsSrikanteswara Dakshina-Murthy, Cyrus E. Tabery, Chih-Yuh Yang, Bin Yu
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Abstract
A method of forming a gate for a Fin Field Effect Transistor (FinFET) is provided. The method includes forming a first layer of material over a fin and forming a second layer over the first layer. The second layer includes either Ti or TiN. The method further includes forming a third layer over the second layer. The third layer includes an anti-reflective coating. The method also includes etching the first, second and third layers to form the gate for the FinFET.
Claims20
A method of forming a gate electrode for a Fin Field Effect Transistor (FinFET), comprising:
- forming a first layer over a fin;
- forming an etch stop layer over the first layer;
- applying an anti-reflective coating to the etch stop layer;
- forming a photo-resist layer in a gate pattern over the anti-relective coating;
- etching the anti-reflective coating;
- and
- etching the etch stop layer and the first layer to form the gate electrode in the first layer in a shape corresponding to the gate pattern.
A method of forming a gate for a Fin Field Effect Transistor (FinFET), comprising:
- forming a first layer of material over a fin;
- forming a second layer over the first layer, the second layer comprising at least one of Ti and TiN;
- forming a third layer over the second layer, the third layer comprising an anti-reflective coating;
- and
- etching the first, second and third layers to form the gate for the FinFET.
A structure for forming a Fin Field Effect Transistor (FinFET), comprising:
- a fin formed on a substrate;
- a first layer formed over the fin;
- a second layer formed over the first layer, the second layer comprising at least one of Ti and TiN;
- a third layer formed over the second layer, the third layer comprising an anti-reflective coating,
- wherein the first, second and third layers are etched to form a gate for the FinFET in the first layer.
Dependencies are inferred from the claim text.