Post-planarization clean-up
AssigneeMicron Technology, Inc.
InventorMichael T. Andreas
Life of this patent
Estimating the term…
Abstract
Methods for removing residuals from the surface of an integrated circuit device. Such methods find particular application in the fabrication of a dual damascene structure following removal of excess portions of a silver-containing metal layer from a device surface. The methods facilitate removal of particulate residuals as well as unremoved portions of the metal layer in a single cleaning process. The cleaning solutions for use with the methods are dilute aqueous solutions containing hydrogen peroxide and at least one acidic component and are substantially free of particulate material. Acidic components include carboxylic acids and their salts.
Claims20
A method of removing residuals from a surface of an integrated circuit device following mechanical removal of a silver-containing metal layer, the method comprising:
- contacting the surface of the integrated circuit device with an aqueous solution containing hydrogen peroxide and at least one acidic component selected from the group consisting of hydroxy acids and salts of hydroxy acids;
- and
- wherein the aqueous solution is substantially devoid of particulate material.
A method of removing residuals from a surface of an integrated circuit device following mechanical removal of a silver-containing metal layer, the method comprising:
- contacting the surface of the integrated circuit device with an acidic aqueous solution consisting essentially of hydrogen peroxide, water and at least one acidic component;
- wherein each acidic component is selected from the group consisting of hydroxy acids and salts of hydroxy acids.
A method of removing residuals from a surface of an integrated circuit device following mechanical removal of a silver-containing metal layer, the method comprising:
- contacting the surface of the integrated circuit device with an acidic aqueous solution consisting essentially of hydrogen peroxide, water and an acidic component;
- wherein the acidic component is selected from the group consisting of a hydroxy acid and a salt of a hydroxy acid.
A method of removing residuals from a surface of an integrated circuit device following mechanical removal of a silver-containing metal layer, the method comprising:
- contacting the surface of the integrated circuit device with a solution consisting essentially of hydrogen peroxide, water and an ammonium salt of a carboxylic acid.
A method of removing residuals from a surface of an integrated circuit device following mechanical removal of a silver-containing metal layer, the method comprising:
- contacting the surface of the integrated circuit device with a solution consisting essentially of dibasic ammonium citrate, hydrogen peroxide and deionized water.
A method of removing residuals from a surface of an integrated circuit device following mechanical removal of a silver-containing metal layer, the method comprising:
- contacting the surface of the integrated circuit device with a solution consisting essentially of citric acid, hydrogen peroxide and deionized water.
A method of removing residuals from a surface of an integrated circuit device following mechanical removal of a silver-containing metal layer, the method comprising:
- contacting the surface of the integrated circuit device with a solution consisting essentially of hydrogen peroxide, water, one or more water-soluble organic solvents and one or more acidic components;
- wherein the acidic components are selected from the group consisting of carboxylic acids and salts of carboxylic acids.
A method of fabricating an integrated circuit device, comprising:
- forming a silver-containing metal layer on a patterned surface of the integrated circuit device;
- abrading the surface of the integrated circuit device with an alumina abrasive, wherein abrading the surface of the integrated circuit device leaves residuals on the surface of the integrated circuit device;
- and
- cleaning the residuals from the surface of the integrated circuit device using an aqueous solution containing hydrogen peroxide and an acidic component, wherein the acidic component is selected from the group consisting of a hydroxy acid and a salt of a hydroxy acid.
A method of fabricating an integrated circuit device, comprising:
- forming a silver-containing metal layer on a patterned insulating layer, wherein the patterned insulating layer has apertures and wherein the silver-containing metal layer fills the apertures and covers a surface of the patterned insulating layer;
- mechanically removing a first portion of the silver-containing metal layer to expose the surface of the patterned insulating layer, wherein a remaining portion of the layer of silver remains in the apertures;
- and
- contacting the surface of the patterned insulating layer with an aqueous solution containing hydrogen peroxide and an ammonium salt of a hydroxy acid.
Dependencies are inferred from the claim text.