Utilization of disappearing silicon hard mask for fabrication of semiconductor structures

A method of forming a contact opening for a semiconductor device, comprising:

• providing a substrate having an active element on a first surface thereof, a barrier layer over said substrate first surface, a silicon hard mask over said barrier layer, and at least one aperture in said silicon hard mask and said barrier layer to expose said active element;
• depositing a silicidable material over said silicon hard mask;
• annealing said silicidable material to form a mask silicide layer from a reaction between said silicon hard mask and said silicidable material;
• and
• depositing a conductive material within said contact opening.

A method of forming a DRAM chip, comprising:

• providing a substrate having an active element on a first surface thereof, a dielectric layer over said substrate first surface, a polysilicon mask over said dielectric layer, and at least one aperture in said polysilicon mask and said dielectric layer to expose said active element;
• depositing a silicidable material over said polysilicon mask;
• annealing said silicidable material to form a mask silicide layer from a reaction between said polysilicon mask and said silicidable material;
• and
• removing said mask silicide layer.

A method of forming a DRAM chip, comprising:

• providing a substrate having an active element on a first surface thereof, a dielectric layer over said substrate first surface, a polysilicon mask over said dielectric layer, and at least one aperture in said polysilicon mask and said dielectric layer to expose said active element;
• depositing a silicidable material over said polysilicon mask;
• annealing said silicidable material to form a mask silicide layer from a reaction between said polysilicon mask and said silicidable material;
• and
• depositing a conductive material within said at least one aperture.

A method of forming a semiconductor structure, comprising:

• providing a substrate having an active element on a first surface thereof, a barrier layer over said substrate first surface, a silicon hard mask over said barrier layer, and at least one aperture in said silicon hard mask and said barrier layer to expose said active element;
• depositing a silicidable material over said silicon hard mask;
• and
• annealing said silicidable material to form a mask silicide layer from a reaction between said silicon hard mask and said silicidable material.