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US 6,787,462 B2Granted
Method of manufacturing semiconductor device having buried metal wiring
AssigneeKabushiki Kaisha Toshiba
InventorsTadashi Iijima, Tadayoshi Watanabe
Life of this patent
Estimating the term…
Abstract
A metal wiring buried in an insulating layer is subjected to a reducing treatment prior to formation of a second insulating layer on the insulating layer under the condition that the total partial pressure of oxygen and water vapor is sufficiently low.
Claims17
A method of manufacturing a semiconductor device, comprising:
- (a) providing a semiconductor substrate including a first insulating layer having a buried copper wiring formed in its surface region;
- (b) monitoring a total partial pressure of oxygen and water vapor within a process chamber in which said semiconductor substrate is to be introduced;
- (c) in case where the total partial pressure of oxygen and water vapor within said process chamber exceeds a prescribed value as a result of said monitoring, carrying out a treatment to lower the total partial pressure of oxygen and water vapor to a level not higher than said prescribed value;
- (d) introducing said substrate into said process chamber in which the total partial pressure of oxygen and water vapor is not higher than said prescribed value;
- (e) subjecting said copper wiring to a reducing treatment within said process chamber;
- and
- (f) forming a second insulating layer to cover the copper wiring which has been subjected to said reducing treatment.
4 more elements
A method of manufacturing a semiconductor device comprising:
- providing a semiconductor substrate comprising a buried metal wiring;
- estimating a state of oxidation on a surface of said metal wiring by taking into account an amount of sulfur components attached to the surface of said metal wiring;
- determining the conditions of a reducing treatment applied to the surface of said metal wiring based on the estimated state of oxidation, wherein the conditions include a time for said reducing treatment determined by taking into account the amount of sulfur components attached to the surface of said metal wiring;
- applying a reducing treatment to the surface of said metal wiring under the so determined conditions for the reducing treatment;
- and
- forming an insulating layer to cover said reduced metal wiring.
3 more elements
Dependencies are inferred from the claim text.