Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formed

A method for fabricating a metal layer in a semiconductor device, the method comprising:

• forming an insulating layer having a concave portion an a semiconductor substrate;
• forming a selective electroplating mask for exposing a portion of the conductive underlying layer, which is formed at an inside portion of the hole, and for covering at least a portion of the conductive underlying layer, which is formed at the edges of the mouth of the hole;
• and
• selectively electroplating the inside of the concave portion that in exposed by the selective electroplating mask.

A method of forming a metal layer in an integrated circuit device, the method comprising:

• forming a recess in a surface of an insulating layer, the recess having a side wall inside the recess, a bottom inside the recess, and an edge at a boundary of the surface of the insulating layer and the side wall;
• forming a selective deposition mask on the side wall to provide a covered portion of the side wall and to provide an exposed portion of the side wall that is free of the selective deposition mask;
• and
• depositing a metal on the exposed portion of the side wall.