High aspect ratio fill method and resulting structure
AssigneeMicron Technology, Inc.
InventorsNishant Sinha, Paul A. Morgan
Life of this patent
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Abstract
A method is described for filling of high aspect ratio contact vias provided over silicon containing areas. A via is formed in an insulating layer over the silicon containing area and a silicide forming material is deposited in the via. A silicide region is formed over the silicon containing area, the silicide forming material is removed from the via leaving the silicide region. The via is then filled with a conductor using an electroless plating process.
Claims25
A method of forming a contact structure, said method comprising:
- forming an insulating layer over a semiconductor substrate;
- forming an opening in said insulating layer to an area containing silicon;
- depositing a silicide forming material comprising nickel within said opening;
- forming a silicide layer at the interface of said material and said area containing silicon;
- removing at least a portion of said silicide forming material from said opening while leaving said silicide layer;
- and
- forming a conductor within said opening by plating over said silicide layer, wherein said conductor comprises any conductive metal substantially free from copper.
A method of forming a contact structure, said method comprising:
- forming an insulating layer over a semiconductor substrate;
- forming an opening in said insulating layer to an area comprising polysilicon;
- depositing a silicide forming material within said opening;
- forming a silicide layer at the interface of said material and said area containing silicon;
- removing at least a portion of said silicide forming material from said opening while leaving said silicide layer;
- and
- forming a conductor within said opening by plating over said silicide layer, wherein said conductor comprises any conductive metal substantially free from copper.
A method of forming a contact structure, said method comprising:
- forming an insulating layer over a semiconductor substrate;
- forming an opening in said insulating layer to an area containing silicon;
- depositing a silicide forming material within said opening;
- forming a silicide layer at the interface of said material and said area containing silicon;
- removing at least a portion of said silicide forming material from said opening while leaving said silicide layer;
- and
- forming a conductor within said opening by plating over said silicide layer, wherein said conductor comprises any conductive metal substantially free from copper, wherein said forming of a conductor comprises forming a conductor containing tantalum.
A method of forming a contact structure, said method comprising:
- forming a gate stack on a semiconductor substrate, said gate stack comprising a gate oxide layer over a top surface of said substrate and a conductive polysilicon layer over said oxide layer;
- forming an insulating layer over said gate stack and said substrate;
- forming an opening in said insulating layer to said polysilicon layer of said gate stack;
- depositing a silicide forming material within and surrounding said opening;
- forming a silicide layer at the interface of said material and said polysilicon layer;
- removing at least a portion of said silicide forming material from said opening while leaving said silicide layer;
- and
- forming a conductor within said opening by plating over said silicide layer.
Dependencies are inferred from the claim text.