Semiconductor processing methods of forming integrated circuitry

A method of forming integrated circuitry comprising:

• providing a conductive line disposed over a semiconductive substrate, the conductive line having a lower conductive portion and an upper insulative cap overlying the conductive portion;
• providing a conductive node on the substrate;
• forming plurality of insulative layers over the substrate and through which electrical connection with the conductive line and the conductive node is to be made, the plurality of layers at least comprising first and second insulative layers having an insulative etch stop layer interposed therebetween;
• in a common step, removing at least some of the three insulative layers to form a first contact opening and a second contact opening through the three layers, the first contact opening exposing a portion of the insulative cap and the second contact opening exposing a portion of the conductive node;
• after forming the first contact opening and the second contact opening, exposing an upper surface of the conductive portion;
• forming a layer of photoresist over the substrate;
• at least some of the layer of photoresist being received into the first contact opening and the second contact opening;
• patterning the photoresist layer to define a conductive line pattern;
• selectively removing material of an uppermost of the plurality of layers relative the etch stop layer and defining a first trough joined with the first contact opening and a second trough joined with the second contact opening;
• and
• after the selective removing, filling the joined first trough/first contact opening and the joined second trough/second contact opening with a conductive material.

A semiconductor processing method of forming integrated circuitry comprising:

• providing a conductive line formed over a substrate, the conductive line having a conductive portion and an insulative cap received on the conductive portion;
• forming at least three layers over the substrate and cap, the three layers comprising first and second layers having an etch stop layer interposed therebetween;
• in a common masking step, forming a contact opening through the at least three layers to the insulative cap over the conductive line;
• after forming the contact opening to the insulative cap, etching the insulative cap to expose the conductive portion of the conductive line;
• forming a layer of photoresist over the substrate and into the contact opening onto the conductive portion of the line;
• patterning the photoresist to define a conductive line pattern, at least some of the photoresist being received within the contact opening on the conductive portion of the conductive line after the patterning;
• and
• while photoresist is within the contact opening on the conductive line portion, selectively removing material of an uppermost of the-first layer relative to the etch stop layer and defining a trough joined with the contact opening.