Back to results
US 6,787,440 B2Granted
Method for making a semiconductor device having an ultra-thin high-k gate dielectric
AssigneeIntel Corporation
InventorsChristopher G. Parker, Markus Kuhn, Ying Zhou, Scott A. Hareland, Suman Datta, Nick Lindert, Robert S. Chau, Timothy E. Glassman, Matthew V. Metz, Sunit Tyagi
Life of this patent
Estimating the term…
Abstract
A method for making a semiconductor device is described. That method comprises forming on a substrate a buffer layer and a high-k gate dielectric layer, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.
Claims13
A method for making a semiconductor device comprising:
- forming on a substrate a buffer layer and a high-k gate dielectric layer;
- oxidizing the surface of the high-k gate dielectric layer by exposing that surface to ionized oxygen species;
- and then
- forming a gate electrode on the oxidized high-k gate dielectric layer.
1 more element
A method for making a semiconductor device comprising:
- forming on a substrate a buffer layer that comprises a material selected from the group consisting of silicon oxide and silicon oxynitride;
- forming on the buffer layer a high-k gate dielectric layer that comprises a material selected from the group consisting of hafnium oxide, zirconium oxide, titanium oxide, and aluminum oxide;
- oxidizing the surface of the high-k gate dielectric layer using a plasma assisted oxidation process carried out at a temperature that is less then about 500° C.;
- and then
- forming a layer that comprises polysilicon on the oxidized high-k gate dielectric layer.
2 more elements
Dependencies are inferred from the claim text.