Method using planarizing gate material to improve gate critical dimension in semiconductor devices
AssigneeAdvanced Micro Devices, Inc.
InventorsShibly S. Ahmed, Cyrus E. Tabery, Haihong Wang, Bin Yu
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Abstract
A method of manufacturing a semiconductor device may include forming a fin structure on an insulator. The fin structure may include side surfaces and a top surface. The method may also include depositing a gate material over the fin structure and planarizing the deposited gate material. An antireflective coating may be deposited on the planarized gate material, and a gate structure may be formed out of the planarized gate material using the antireflective coating.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a fin structure on an insulator, the fin structure including side surfaces and a top surface;
- depositing a gate material over the fin structure;
- planarizing the deposited gate material;
- depositing an antireflective coating on the planarized gate material;
- and
- forming a gate structure out of the planarized gate material using the antireflective coating.
A method of manufacturing a semiconductor device, comprising:
- forming a fin structure on an insulator;
- depositing polysilicon over the fin structure;
- polishing the polysilicon to obtain a planar top surface;
- depositing an antireflective layer on the planar top surface of the polysilicon;
- and
- forming a gate structure out of the polysilicon using the antireflective layer.
A method of manufacturing a semiconductor device, comprising:
- forming a fin structure on an insulator;
- depositing polysilicon over the fin structure;
- polishing the polysilicon to obtain a planar top surface;
- depositing an antireflective coating on the planar top surface of the polysilicon;
- depositing a photoresist layer over the antireflective coating;
- patterning the photoresist layer to define a gate structure;
- and
- etching the polysilicon from around the defined gate structure.
Dependencies are inferred from the claim text.