US 6,787,434 B1 · Method of fabricating polysilicon film by nickel/copper induced lateral crystallization

Abstract

The present invention relates to a method of fabricating polysilicon film by Nickel and Copper induced lateral crystallization for the TFT-LCD, comprising the step of: a) a thin (˜4 nm) Copper and Nickel being evaporated onto the substrate; b) a amorphous-silicon film (˜50 nm) being evaporated onto thereof obtained according to a); c) applying annealing at less than 600° C. to thereof obtained according to b) for fast fabricating poly-silicon film. It is approximately 10 times faster than that of Ni induced polysilicon. The present invention is to provide a low-temperature (<600° C.) fast growth rate process to convert the hydrogenated amorphous silicon (a-Si:H) films to polysilicon film for substantially time-saving process and industrial applicability.

Claims8

Dependent claims

A method of fabricating polysilicon film by Nickel/Copper induced lateral crystallization, the method comprising:

a) evaporating a 1-nm to 50-nm-thick Copper (Cu) on substrate;
b) evaporating a 1-nm to 50-nm-thick Nickel (Ni) on said Copper;
c) forming a 1-nm to 200-nm-thick amorphous silicon thin film on thereof obtained according to b) including the Copper (Cu) and Nickel (Ni);
and
d) forming a polysilicon thin film on thereof obtained according to c) being processed by annealing at a temperature below 600° C.

2 more elements

Dependencies are inferred from the claim text.

Method of fabricating polysilicon film by nickel/copper induced lateral crystallization

Life of this patent

Method of fabricating polysilicon film by nickel/copper induced lateral crystallization

Life of this patent

Abstract

Claims8