Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsYuichiro Mitani, Yukie Nishikawa
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Abstract
A method of manufacturing a semiconductor device comprises a step of depositing a crystalline insulating layer oriented in a predetermined crystal face orientation by epitaxial growth on an amorphous semiconductor layer, a step of depositing a second amorphous semiconductor layer on the crystalline insulating layer, a step of growing said first and second semiconductor layers into a polycrystal or single crystal layer in a solid phase, using said crystalline insulating film as core, and a step of forming a functional element containing said first and second semiconductor layer.
Claims13
A method of manufacturing a semiconductor device comprising:
- contacting an amorphous semiconductor layer and a crystalline insulating layer oriented in a predetermined crystal face orientation;
- then growing said amorphous semiconductor layer in a solid phase by using the insulating layer as core, to form a polycrystal or single crystal semiconductor layer with a unified crystal face orientation;
- and
- forming a functional element on the basis of said polycrystal or single crystal semiconductor layer, wherein
- said crystalline insulating layer is formed by depositing oxide of a rare earth metal on the amorphous semiconductor layer.
Dependencies are inferred from the claim text.