Semiconductor device and method for manufacturing semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorJun Kanamori
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Abstract
In a semiconductor device and method of manufacturing thereof, a semiconductor device having an SOI structure is provided with a capacitor including a first electrode in an SOI layer, a second electrode opposing the first electrode, and a dielectric film therebetween. An isolation region is provided as contained in the SOI layer to electrically isolate the first electrode from remaining areas of the SOI layer, such as active areas or the like. The method includes forming the isolation regions in the SOI layer, forming the first electrode in the SOI layer as electrically isolated from the remaining areas of the SOI layer by the isolation regions, forming the dielectric film on the first electrode, and forming the second electrode on the dielectric film opposite the first electrode.
Claims17
A method for manufacturing a semiconductor device having an SOI structure, comprising:
- forming a silicon layer on an insulating layer;
- forming an isolation region within said silicon layer;
- forming a first electrode within said silicon layer, said first electrode being electrically isolated from remaining areas of said silicon layer by said isolation region;
- forming a dielectric member on said first electrode;
- and
- forming a second electrode on said dielectric member opposite said first electrode,
- said first electrode, said dielectric member and said second electrode forming a capacitor,
- wherein said forming a first electrode comprises
- ion implanting an inert element into said silicon layer over an anticipated formation area of said capacitor to form polysilicon within said silicon layer, and
- ion implanting a specific impurity into said polysilicon, so that said first electrode is formed as having a desired conductivity.
A method for manufacturing a semiconductor device having an SOI structure, comprising:
- forming a silicon layer on an insulating layer;
- forming an isolation region within said silicon layer;
- forming a first electrode within said silicon layer, said first electrode being electrically isolated from remaining areas of said silicon layer by said isolation region;
- forming a dielectric member on said first electrode;
- and
- forming a second electrode on said dielectric member opposite said first electrode,
- said first electrode, said dielectric member and said second electrode forming a capacitor,
- wherein said forming a first electrode comprises
- forming a metal film on said silicon layer over an anticipated formation area of said capacitor, and
- transforming said silicon layer under said metal film into a silicide by heat treatment to form said first electrode.
A method for manufacturing a semiconductor device having an SOI structure, comprising:
- forming a silicon layer on an insulating layer;
- forming an isolation region within said silicon layer;
- forming a first electrode within said silicon layer, said first electrode being electrically isolated from remaining areas of said silicon layer by said isolation region;
- forming a dielectric member on said first electrode;
- forming a second electrode on said dielectric member opposite said first electrode,
- said first electrode, said dielectric member and said second electrode forming a capacitor;
- and
- forming a layer insulating film having a pattern that opens over an anticipated formation area of said capacitor, before said forming a second electrode,
- said forming a second electrode includes
- forming a metal layer that at least covers said anticipated formation area and a specific portion of said layer insulating film, and
- performing a photolithography process and etching on said metal layer at said anticipated formation area to form said second electrode, and at said specific portion to form a wiring.
A method of manufacturing a semiconductor device having an SOI structure, comprising:
- forming a silicon layer on an insulating layer;
- forming an isolation region within said silicon layer;
- forming a first electrode within said silicon layer, said first electrode being electrically isolated from remaining areas of said silicon layer by said isolation region;
- forming a dielectric member on said first electrode;
- forming a second electrode on said dielectric member opposite said first electrode,
- said first electrode, said dielectric member and said second electrode forming a capacitor,
- wherein said forming a dielectric member comprises oxidizing said first electrode;
- forming an active area of a transistor within said silicon layer, said active area being isolated from said first electrode by said isolation region;
- and
- oxidizing said active area of said transistor to form a gate insulation layer,
- said dielectric member being further oxidized during said oxidizing of said active area.
Dependencies are inferred from the claim text.