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US 6,787,423 B1Granted
Strained-silicon semiconductor device
AssigneeAdvanced Micro Devices, Inc.
InventorQi Xiang
Life of this patent
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Abstract
High-speed semiconductor devices with reduced source/drain junction capacitance and reduced junction leakage based on strain silicon technology are fabricated by extending a shallow trench isolation region under the strained silicon layer. Embodiments include anisotropically etching the trench region and subsequently isotropically etching the trench to form laterally extending regions under the strained silicon layer. Embodiments also include filling the trench with an insulating material such that an air pocket is formed in the trench.
Claims8
A method of manufacturing a semiconductor device, the method comprising:
- providing a semiconductor substrate comprising a silicon germanium (SiGe) layer formed on a substrate layer and a strained silicon layer formed on the SiGe layer;
- forming a trench extending from an upper surface of the strained silicon layer into the SiGe layer,
- enlarging the trench by forming a laterally extending region which undercuts a portion of the strained silicon layer;
- filling the trench with an insulating material to form a trench isolation region;
- and
- forming a transistor comprising source/drain regions substantially within the strained silicon layer such that a portion of each source/drain region is located over the laterally extending regions.
3 more elements
Dependencies are inferred from the claim text.