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US 6,787,414 B2Granted
Capacitor for semiconductor memory device and method of manufacturing the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorKee Jeung Lee
Life of this patent
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Abstract
Disclosed is a capacitor for semiconductor device with a dielectric layer having low leakage current and high dielectric constant. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein the dielectric layer is a TiON layer.
Claims24
A method of manufacturing a capacitor for a semiconductor memory device comprising:
- forming a lower electrode on a semiconductor substrate;
- depositing a TiON layer as a dielectric layer on the lower electrode;
- annealing the TiON layer in an amorphous state after forming the TION layer;
- and
- forming an upper electrode on the annealed TiON layer.
2 more elements
A method of manufacturing a capacitor for a semiconductor memory device comprising:
- forming a lower electrode on a semiconductor substrate;
- surface-treating to prevent a natural oxide layer from generating on the surface of the lower electrode;
- depositing a TiON layer on the lower electrode using an organic Ti metal precursor;
- annealing the TiON Layer, wherein the wherein the annealing step of the TiON layer is crystallized by annealing according to the RTP or in a furnace under atmosphere of a gas containing oxygen at temperature of 650 to 950° C.;
- and
- forming an upper electrode on the annealed TiON layer,
- wherein the TiON, layer is formed by chemical vapor reaction of Ti chemical vapor, NH3 gas and O2 gas in the LPCVD chamber maintained at temperature of 300 to 600° C., wherein the Ti chemical vapor is an evaporated organic Ti metal precursor, and
- wherein the annealing step of the TiON layer is thermal-treated under atmosphere of a gas containing nitrogen at temperature of 600 to 950° C. in the RTP or furnace.
5 more elements
Dependencies are inferred from the claim text.