Systems and methods for forming dense n-channel and p-channel fins using shadow implanting
AssigneeAdvanced Micro Devices, Inc.
InventorsWiley Eugene Hill, Shibly S. Ahmed, Haihong Wang, Bin Yu
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Abstract
A method facilitates the doping of fins of a semiconductor device that includes a substrate. The method includes forming fin structures on the substrate, where each of the fin structures includes a cap formed on a fin. The method further includes performing a first tilt angle implant process to dope a first one of the fins with n-type impurities and performing a second tilt angle implant process to dope a second one of the fins with p-type impurities.
Claims15
A method of doping fins of a semiconductor device that includes a substrate the method comprising:
- forming a plurality of fin structures on the substrate, each of the fin structures including a cap formed on a fin;
- performing a first tilt angle implant process to selectively dope a first one of the fins with n-type impurities;
- and
- performing a second tilt angle implant process to selectively dope a second one of the fins with p-type impurities.
A method for doping fins of a semiconductor device that includes a substrate, the method comprising:
- forming a plurality of fin structures on the substrate, each of the fin structures including a cap portion formed on a fin portion;
- performing a first tilt angle implant process to selectively dope a first one of the fin portions with n-type impurities from a first direction;
- performing a second tilt angle implant process to selectively dope a second one of the fin portions with p-type impurities from a second direction;
- performing a third tilt angle implant process to further dope the first one of the fin portions with n-type impurities from the second direction;
- and
- performing a fourth tilt angle implant process to further dope the second one of the fin portions with p-type impurities from the first direction.
Dependencies are inferred from the claim text.