Methods of wafer level fabrication and assembly of chip scale packages
AssigneeMicron Technology, Inc.
InventorWarren M. Farnworth
Life of this patent
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Abstract
A method for producing integrated circuit devices comprises the steps of forming and packaging such devices at the wafer scale, including forming a plurality of chip circuits with bond pads, adhesively fixing a plate of glass to the active surface of the wafer, slicing the wafer, applying a sealant layer to the back side of the wafer, forming contact holes through the upper glass plate, metallizing the glass plate and singulating the individual chips. Use of etchable glass for the package and palladium for metallization provides an advantageous construction method.
Claims20
A manufacturing method for a plurality of semiconductor devices comprising:
- forming a semiconductor wafer substrate having a first side, having a second side, having a plurality of semiconductor devices formed on said first side of said semiconductor wafer substrate having street areas located therebetween, each semiconductor device of said plurality of semiconductor devices having at least one circuit and a plurality of bond pads, at least one bond pad of said plurality of bond pads connected to said at least one circuit;
- adhesively securing a first plate of glass to said first side of said semiconductor wafer substrate, said first plate of glass having an exterior surface and having an interior surface substantially parallel to said exterior surface;
- planarizing and polishing said exterior surface of said first plate of glass in correlation with said second side of said semiconductor wafer substrate;
- removing a portion of said second side of said semiconductor wafer substrate to reduce a thickness thereof;
- separating said plurality of semiconductor devices by removing semiconductor substrate material in said street areas, said plurality of semiconductor devices remaining affixed to said first plate of glass;
- applying a sealant material to said second side of said semiconductor wafer substrate;
- forming an array of contact holes extending through said first plate of glass to said plurality of bond pads;
- depositing a metal on said exterior surface of said first plate of glass to form a pattern of conductive leads for connecting to said plurality of bond pads;
- and
- singulating said plurality of semiconductor devices by separation thereof in said street areas.
A manufacturing method for a semiconductor device using a semiconductor wafer substrate having a first side and a second side, a plurality of semiconductor devices formed on said semiconductor wafer substrate having street areas therebetween, each semiconductor device of said plurality of semiconductor devices having at least one circuit formed therein and a plurality of bond pads on a first side thereof, at least one bond pad of said plurality of bond pads connected to said at least one circuit, said method comprising:
- adhesively securing a first plate of glass to said first side of said semiconductor wafer substrate, said first plate of glass having an exterior surface and a substantially parallel interior surface;
- planarizing said exterior surface of said first plate of glass in correlation with said second side of said semiconductor wafer substrate after adhesively securing said first plate of glass to said first side of said semiconductor wafer substrate with adhesive;
- reducing a thickness of said semiconductor wafer substrate by removing a portion of said second side thereof;
- separating said plurality of semiconductor devices by removing substrate material in said street areas, said plurality of semiconductor devices remaining adhesively secured to said first plate of glass;
- applying a sealant material to said second side of said semiconductor wafer substrate;
- forming an array of contact holes extending through said first plate of glass to said plurality of bond pads;
- metallizing said exterior surface of said first plate of glass to form a pattern of conductive leads for connecting said plurality of bond pads to said metallized exterior surface of said first plate of glass;
- singulating said plurality of semiconductor devices by separation thereof in said street areas;
- and
- flattening said exterior surface of said first plate of glass in correlation with said second side of said semiconductor wafer substrate after reducing said thickness of said semiconductor wafer substrate.
Dependencies are inferred from the claim text.