Electrical and thermal contact for use in semiconductor devices
AssigneeMicron Technology, Inc.
InventorAlan R. Reinberg
Life of this patent
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AssigneeMicron Technology, Inc.
InventorAlan R. Reinberg
Estimating the term…
An electrical and thermal contact which includes an intermediate conductive layer, an insulator component, and a contact layer. The insulator component is fabricated from a thermally insulative material and may be sandwiched between the intermediate conductive layer and the contact layer. The electrical and thermal contact may be fabricated by forming a first conductive layer on a surface of the semiconductor device, depositing a dielectric layer adjacent the first layer, patterning the dielectric layer to define the insulator component, and forming a second conductive layer adjacent the insulator component and in partial contact with the first layer. The first and second layers are respectively patterned to define the intermediate conductive layer and the contact layer. The electrical and thermal contact effectively contains heat within and prevents heat from dissipating from a contacted structure, such as a phase change component that may be switched between two or more electrical states.
A process for fabricating a contact on a semiconductor device, comprising:
A method for thermally insulating a phase change component of a semiconductor device structure, comprising:
A method for fabricating a contact for a semiconductor device structure including a phase change component, comprising:
Dependencies are inferred from the claim text.