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US 6,787,385 B2Granted
Method of preparing nitrogen containing semiconductor material
AssigneeMidwest Research Institute
InventorsGreg D. Barber, Sarah R. Kurtz
Life of this patent
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Abstract
A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.
Claims23
A method for producing an epilayer of a group III element, nitrogen, and a group V element other than nitrogen, the method comprising:
- providing a substrate and forming an epilayer on said substrate, said epilayer comprising a group III element, nitrogen and a group V element other than nitrogen, wherein metal organic chemical vapor deposition is used to deposit at least one of said group II and group V elements and wherein said nitrogen is from a nitrogen halide source, wherein the final nitrogen concentration of the epilayer is from about 0.1% to about 3%.
A nitride-based semiconductor for a solar cell comprising:
- a substrate;
- and
- an epilayer comprising a group III element, nitrogen, and a group V element other than nitrogen, wherein metal organic chemical vapor deposition is used to deposit at least one of said group III and group V elements and wherein said nitrogen is from a nitrogen halide source, wherein the nitrogen concentration of the epilayer is from about 0.1% to about 3%.
Dependencies are inferred from the claim text.