Back to results
US 6,787,371 B2Granted
Method of forming ferroelectric film, ferroelectric memory, method of manufacturing the same, semiconductor device, and method of manufacturing the same
AssigneeSeiko Epson Corporation
InventorTatsuo Sawasaki
Life of this patent
Estimating the term…
Abstract
In a method of forming a ferroelectric film according to the present invention, pulsed laser light or pulsed lamp light is applied to an amorphous oxide film formed over a substrate to form microcrystalline nuclei of oxide in the film. Crystallization of the oxide is performed by applying pulsed laser light or pulsed lamp light to the film including the microcrystalline nuclei to form the ferroelectric film.
Claims16
A method of forming a ferroelectric film comprising:
- applying pulsed laser light or pulsed lamp light to an amorphous oxide film formed over a substrate to form microcrystalline nuclei of oxide in the film, and
- applying pulsed laser light or pulsed lamp light to the film to crystallize the oxide, so that a ferroelectric film is formed.
A method of forming a ferroelectric film comprising:
- applying pulsed laser light only to a predetermined portion of an amorphous oxide film formed over a substrate to form microcrystalline nuclei of oxide in the film, and
- applying pulsed lamp light to the film to crystallize the oxide in the predetermined portion, so that a ferroelectric film is formed.
A method of forming a ferroelectric film comprising:
- applying pulsed lamp light to an amorphous oxide film formed over a substrate to form microcrystalline nuclei of oxide in the film, and
- applying pulsed laser light only to a predetermined portion of the film to crystallize the oxide in the predetermined portion, so that a ferroelectric film is formed.
A method of forming a ferroelectric film comprising:
- applying pulsed laser light or pulsed lamp light to an amorphous oxide film formed over a substrate, and
- after applying the pulsed laser light or the pulsed lamp light to the amorphous oxide film, applying pulsed laser light or pulsed lamp light to the oxide film to crystallize oxide in the film, so that a ferroelectric film is formed.
Dependencies are inferred from the claim text.