Photosensitive polymers and resist compositions comprising the photosensitive polymers
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-woo Kim, Sang-gyun Woo, Yool Kang
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Abstract
A photosensitive polymer of a resist composition includes a copolymer of alkyl vinyl ether containing silicon and maleic anhydride, represented by the following formula: where R1 is —H, —OSi(CH3)2C(CH3)3 or —OSi(CH3)3; R2 is —H, —OH, —OCOCH3, —OSi(CH3)2C(CH3)3 or —OSi(CH(CH3)2)3; R3 is —H, —OH or —OCOCH3; R4 is —H, —OSi(CH3)2C(CH3)3, —CH2OSi(CH3)2C(CH3)3 or —CH2OSi(CH(CH3)2)3; and at least one of R1, R2, R3 and R4 is a Si-containing group.
Claims21
A photosensitive polymer comprising a copolymer of alkyl vinyl ether and maleic anhydride, represented by the following formula:
- where
- R1 is —H, —OSi(CH3)2C(CH3)3 or —OSi(CH3)3,
- R2 is —H, —OH, —OCOCH3, —OSi(CH3)2C(CH3)3 or —OSi(CH(CH3)2)3,
- R3 is —H, —OH or —OCOCH3,
- R4 is —H, —OSi(CH3)2C(CH3)3, —CH2OSi(CH3)2C(CH3)3 or —CH2OSi(CH(CH3)2)3 and
- at least one of R1, R2 and R4 is a Si-containing group.
A resist composition comprising:
- a photoacid generator (PAG);
- and
- a photosensitive polymer comprising a copolymer of alkyl vinyl ether and maleic anhydride, represented by the following formula:
- where
- R1 is —H, —OSi(CH3)2C(CH3)3 or —OSi(CH3)3,
- R2 is —H, —OH, —OCOCH3, —OSi(CH3)2C(CH3)3 or —OSi(CH(CH3)2)3,
- R3 is —H, —OH or —OCOCH3,
- R4 is —H, —OSi(CH3)2C(CH3)3, —CH2OSi(CH3)2C(CH3)3 or —CH2OSi(CH(CH3)2)3 and
- at least one of R1, R2 and R4 is a Si-containing group.
A resist composition comprising:
- a photoacid generator (PAG);
- and
- a photosensitive polymer comprising a polymer of alkyl vinyl ether, represented by the following formula:
- where
- R1 is —H, —OSi(CH3)2C(CH3)3 or —OSi(CH3)3,
- R2 is —H, —OH, —OCOCH3, —OSi(CH3)2C(CH3)3 or —OSi(CH(CH3)2)3,
- R3 is —H, —OH or —OCOCH3,
- R4 is —H, —OSi(CH3)2C(CH3)3, —CH2OSi(CH3)2C(CH3)3 or —CH2OSi(CH(CH3)2)3 and
- at least one of R1, R2 and R4 is a Si-containing group.
Dependencies are inferred from the claim text.