Pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator

#1. Technical Field

#A method for inhibiting pattern width slimming or reduction of photoresists is disclosed. In particular, a method for inhibiting pattern width slimming due to the beam emitted by a scanning electron microscope (hereinafter, it is abbreviated to “SEM”) while measuring a critical dimension (hereinafter, it is abbreviated to “CD”) of a photoresist pattern obtained by using a photoresist composition comprising thermal acid generator is disclosed.

#2. Description of the Prior Art

#FIG. 1A is a photograph of a photoresist pattern obtained according to a conventional method that is taken immediately after the CD measurement using a SEM.

#FIG. 1B is a photograph of a photoresist pattern obtained according to the conventional method that is taken after approximately thirty seconds since the CD measurement using the SEM.

#FIG. 2A is a photograph of a photoresist pattern obtained according to the present invention that is taken immediately after the CD measurement using the SEM.

#A process for producing a photoresist pattern according to the present invention includes the steps of:

#(a) coating a photoresist composition containing a thermal acid generator on a substrate to form a photoresist film;

#(b) exposing the photoresist film;