Method for the formation of silica film, silica film, insulating film, and semiconductor device
AssigneeJsr Corporation
InventorsEiji Hayashi, Atsushi Shiota, Michinori Nishikawa, Kinji Yamada
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Abstract
A method for the formation of a silica film which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500° C. and (B-2) a surfactant. The silica film has excellent mechanical strength showing a dielectric constant of generally 2.2 or lower, and hence is useful as a dielectric film in semiconductor devices and the like.
Claims11
A method for the formation of a silica film which comprises subjecting a film obtained by a method which comprises treating a film in a supercritical medium, the film comprising (A) a siloxane compound and (B) at least one member selected from the group consisting of (B-1) a compound compatible with or dispersible in ingredient (A) and having a boiling or decomposition temperature of from 150 to 500° C. and (B-2) a surfactant, to heat treatment at 200 to 500° C.,
- wherein at least one of the following (i), (ii) and (iii) applies:
- (i) (B-1) is contained in an amount of from 20 to 300 parts by weight per 100 parts by weight of the ingredient (A) (in terms of the product of complete hydrolysis and condensation),
- (ii) (B-2) comprises at least one member selected from the group consisting of nonionic surfactants and cationic surfactants,
- (iii) (B-2) is contained in an amount of from 5 to 300 parts by weight per 100 parts by weight of ingredient (A) (in terms of the product of complete hydrolysis and condensation).
Dependencies are inferred from the claim text.