Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth
AssigneesSymetrix Corporation, Matsushita Electric Industrial Co., Ltd.
InventorsKiyoshi Uchiyama, Narayan Solayappan, Carlos A. Paz de Araujo
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Abstract
A method of forming a Bi-layered superlattice material on a substrate using chemical vapor deposition of a precursor solution of trimethylbismuth and a metal compound dissolved in an organic solvent. The precursor solution is heated and vaporized prior to deposition of the precursor solution on an integrated circuit substrate by chemical vapor deposition. No heating steps including a temperature of 650° C. or higher are used.
Claims23
A m thod of making a thin film layered superlattice material on an integrated circuit substrate using trimethylbismuth, said method comprising the steps of:
- dissolving said trimethylbismuth and a metal compound in a solvent to produce a final precursor liquid;
- forming a mist of said final precursor liquid with a carrier gas to produce a precursor mist;
- vaporizing said precursor mist to produce a precursor vapor;
- providing said integrated circuit substrate;
- applying said precursor vapor onto said substrate to produce said thin film superlattice material without any heating step that includes a temperature of 650° C. or higher;
- and
- completing the fabrication of said integrated circuit to include at least a portion of said thin film layered superlattice material in a component of said integrated circuit.
A method of making a thin film layered superlattice material on an integrated circuit substrate using trimethylbismuth, said method comprising the steps of:
- dissolving said trimethylbismuth and a metal compound in a solvent to produce a precursor liquid, with the relative concentration of said trimethylbismuth to said solvent being 15 mol % or less;
- forming a mist of said precursor liquid with a carrier gas to produce a precursor mist;
- vaporizing said precursor mist to produce a precursor vapor;
- providing said integrated circuit substrate;
- applying said precursor vapor onto said substrate to produce said thin film superlattice material without any heating step that includes a temperature of 650° C. or higher;
- and
- completing the fabrication of said int grat d circuit to include at least a portion of said thin film layered superlattice material in a component of said integrated circuit.
Dependencies are inferred from the claim text.