Two-stage etching process
OwnerXikun Wang, Scott Williams +1inventors
InventorsXikun Wang, Scott Williams, Shaoher X. Pan
Life of this patent
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Abstract
A process for etching a substrate and removing etch residue deposited on the surfaces in the etching chamber has two stages. In the first stage, an energized first process gas is provided in the chamber, and in the second stage, an energized second process gas is provided in the chamber. The energized first process gas comprises SF6 and Ar, the volumetric flow ratio of SF6 to other components of the first process gas being from about 5:1 to about 1:10. The energized second process gas comprises CF4 and Ar, the volumetric flow ratio of CF4 to other components of the second process gas being from about 1:0 to about 1:10.
Claims14
A substrate etching method comprising:
- placing a substrate in the chamber, the substrate comprising a first silicon-containing layer overlying a second silicon-containing layer;
- in a first stage, etching the first silicon-containing layer by providing in the chamber, an energized first process gas comprising (i) SF6 and (ii) one or more other components, the other components comprising HBr and Ar, the volumetrie flow ratio of SF6 to the other components of the first procoss gas being from about 5:1 to about 1:10;
- and
- in a second stage, etching the second sllicon-containing layer by providing in the chamber, an energizod second process gas comprising (i) CF4 and (ii) one or more other components, the other components comprising Ar.
A substrate etching method comprising:
- placing a substrate in the chamber, the substrate comprising a first silicon-containing layer overlying a second silicon-containing layer;
- in a first stage, etching the first silicon-containing layer by providing in the chamber, an energized first process gas comprising SF6, HBr and CHF3;
- and
- in a second stage, etching the second siiicon-containing layer by providing in the chamber, an energized second process gas comprising (i) CF4 and (ii) one or more other components, the other components comprising Ar process gas.
A substrate etching method comprising:
- placing a substrate in the chamber, the substrate comprising a first silicon-containing layer overlying a second silicon-containing layer;
- in a first stage, etching the first silicon-containing layer by providing in the chamber, an energized first process gas comprising SF6, CF4, CHF3, HBr and Ar;
- and
- in a second stage, etching the second silicon-containing layer by providing in the chamber, an energized second process gas comprising (i) CF4 and (ii) one or more other oomponents, the other components comprising Ar.
Dependencies are inferred from the claim text.