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US 6,786,974 B2Granted
Insulating film forming method and insulating film forming apparatus
AssigneeTokyo Electron Limited
InventorsTakayuki Komiya, Shinji Nagashima, Shigeyoshi Kojima
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Abstract
Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.
Claims7
An insulating film forming apparatus, comprising:
- a first coating device for applying a first inorganic insulating film material on a substrate;
- a second coating device for applying a second organic insulating film material on the applied first insulating film material;
- a plurality of kinds of thermal processing devices set on different thermal processing conditions respectively, for performing a thermal processing to the substrate on which the insulating film materials are applied by said first and second coating devices;
- a transfer device, for transferring the substrate at least between said first coating device, said second coating device, and said respective thermal processing devices;
- and
- wherein said first coating device, said second coating device, said respective thermal processing devices, and said transfer device are included integrally,
- wherein said plurality of kinds of thermal processing devices is a single wafer processing type processing device, and
- wherein the plurality of kinds of thermal processing devices has:
- a thermal processing device for drying a solvent from at least one of the first insulating film material and the second insulating film material which are applied on the substrate;
- a low-oxygen and high-temperature heat processing station for heating at least one of the first insulating film material and the second insulating film material which are applied on the substrate;
- and
- a low-oxygen curing and cooling processing station having:
- a heat processing chamber and a cooling processing chamber communicated with each other, the heat processing chamber for heating the first and the second insulating film material under a low oxygen atmosphere;
- the cooling processing chamber for cooling the first and the second insulating film material;
- a chill plate for cooling the substrate placed thereon;
- and a moving mechanism for moving the chill plate in a horizontal direction between the heating chamber and the cooling chamber so that the substrate is transferred directly between the heating chamber and the cooling chamber.
13 more elements
Dependencies are inferred from the claim text.