Loading patent…
AssigneeAixtron SE
InventorsGerd Strauch, Markus Reinhold
Estimating the term…
The invention relates to a method and to a device for carrying out the method for depositing, in particular, crystalline layers on substrates that are also, in particular, crystalline. According to the invention, at least two process gases are introduced separate from one another into a process chamber of a reactor, whereby the first process gas flows through a central line having a central outlet opening, and the second process gas flows through a line, which is peripheral thereto and which has a peripheral outlet opening. The second process gas flows through one or more supply lines and into a mixing chamber and flows through additional means, which influence the gas stream and which are provided for homogenizing the radial flow profile of the process gas exiting the peripheral outlet opening. The aim of the invention is to obtain a homogeneous radial flow profile by using simple means. To this end, the invention provides that the second process gas flows through a flow influencing element, which is situated downstream from the mixing chamber and which is provided, in particular, in the form of an annular throttle or of turbulence generator, and flows through an annular pre-chamber situated downstream therefrom, after which said second process gas exits through a gas-permeable gas outlet ring.
Gas-admission element on a device for depositing crystalline layers on likewise crystalline substrates, by means of which at least two process gases can be introduced into a process chamber of a reactor separately from one another, having a central line with a central outlet opening for the first process gas, and having a line, which is peripheral with respect to the central line and has a peripheral outlet opening for the second process gas, which peripheral line has means, which influence the gas stream and are disposed between one or more feed lines opening out into a mixing chamber and the peripheral outlet opening, for homogenizing the radial flow profile of the process gas emerging from the peripheral outlet opening, characterized by a flow-influencing element, in the form of an annular throttle or a swirl generator, which is disposed downstream of the mixing chamber, and an annular antechamber, which is disposed downstream of the flow-influencing element and is surrounded by a gas-permeable gas-discharge ring.
Dependencies are inferred from the claim text.