Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal

An apparatus for producing a silicon carbide single crystal where a silicon carbide single crystal substrate that is a seed crystal is disposed inside a container and a source material for the silicon carbide single crystal is supplied to grow the silicon carbide single crystal on the silicon carbide single crystal substrate, the apparatus characterized in that:

• the silicon carbide single crystal substrate having a protection layer on a back surface is disposed so as to close an opening formed in a wall of the container;
• the silicon carbide single crystal substrate is supported by a supporting part disposed on a side wall defining the opening such that an entire front surface of the silicon carbide single crystal substrate faces the source material to grow the silicon carbide single crystal;
• and
• the protection layer is exposed to an outside space.

An apparatus for producing a silicon carbide single crystal where a silicon carbide single crystal substrate that is a seed crystal is disposed inside a container and a source material for the silicon carbide single crystal is supplied to grow the silicon carbide single crystal on the silicon carbide single crystal substrate, the apparatus characterized in that:

• a protection layer is formed on a back surface the silicon carbide single crystal substrate;
• a supporting part is provided on an inner wall of the container for disposing the silicon carbide single crystal substrate to a predetermined position in the container,
• wherein the supporting part mechanically supports the silicon carbide single crystal substrate at a periphery of the substrate such that a gap with a predetermined width is provided between the protection layer of the silicon carbide single crystal substrate and an inner wall of the container;
• an opening is formed in a wall of the container at a position facing the protection layer of the silicon carbide single crystal substrate;
• and
• a lid-shaped member is provided so as to close the opening and to adjust the predetermined width of the gap.

A substrate for growing a silicon carbide single crystal, comprising:

• a silicon carbide single crystal substrate, which is a seed crystal;
• and
• a protection layer formed on a back surface of the silicon carbide single crystal substrate, wherein
• a front surface of the silicon carbide single crystal substrate has a supported face supported by a supporting part and disposed at a periphery of the front surface;
• and
• a growth face disposed on a center of the front surface and projecting toward a source material, the growth face for growing the silicon carbide single crystal,
• wherein the growth face has a conically shaped inner surface that protrudes from the supported face.