Method for low temperature photonic crystal structures
AssigneeAgilent Technologies, Inc.
InventorJeremy A. Theil
Life of this patent
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Abstract
A method for making photonic crystal structures using amorphous silicon that is temperature compatible with a wide variety of substrates. Both hydrogenated and non-hydrogenated amorphous silicon may be used.
Claims30
A method for making a photonic crystal structure at a temperature compatible with a substrate comprising a material selected from the group consisting of III-V compounds, silicon, glass, copper and aluminum, said method comprising:
- depositing a first amorphous silicon layer on said substrate at said temperature;
- patterning said first amorphous silicon layer to correspond to a first layer of said photonic crystal structure;
- depositing a first sacrificial filler layer to planarize said first amorphous silicon layer;
- depositing a second amorphous silicon layer on said first amorphous silicon layer;
- patterning said second amorphous silicon layer to correspond to a second layer of said photonic crystal structure;
- depositing a second sacrificial filler layer to planarize said second amorphous silicon layer;
- and
- removing said first and said second sacrificial filler layer from said photonic crystal structure using an etching process.
A method for making a two-dimensional photonic crystal structure at a temperature compatible with a substrate comprising a material selected from the group consisting of III-V compounds, silicon, glass and aluminum, said method comprising:
- depositing an amorphous silicon layer on said substrate at said temperature;
- and
- patterning said amorphous silicon layer to correspond to a layer of said two dimensional photonic crystal structure.
A method for making a photonic crystal structure at a temperature compatible with a substrate comprising a material selected from the group consisting of III-V compounds, silicon, glass, copper and aluminum, said method comprising:
- depositing a first amorphous silicon layer on said substrate at said temperature;
- patterning said first amorphous silicon layer to correspond to a first layer of said photonic crystal structure;
- depositing a sacrificial filler layer to planarize said first amorphous silicon layer;
- depositing a second amorphous silicon layer on said first amorphous silicon layer;
- patterning said second amorphous silicon layer to correspond to a second layer of said photonic crystal structure;
- and
- removing said sacrificial filler layer from said photonic crystal structure using an etching process.
Dependencies are inferred from the claim text.