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US 6,786,936 B2Granted
Methods, complexes, and systems for forming metal-containing films on semiconductor structures
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A method of forming a film on a substrate using Group IVB, VB, or VIB metal complexes. The methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Claims21
A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned therein;
- a vessel containing a precursor comprising one or more complexes of the formula:
- [(R1)NC(R2)C(R3)N(R4)]xMLy
- wherein:
- M is a group IVB, VB, or VIB metal:
- each R1, R2, R3, and R4 is independently H or an organic group;
- L is selected from the group of CO, NO, CN, CS, CNR3, R8CN, or R7, wherein each R5, R6, and R7 group is independently an organic group;
- x=1 to 4;
- and
- y=1 to 4;
- and
- a source of inert carrier gas for transferring the precursor to the chemical vapor deposition chamber.
9 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a substrate positioned therein;
- a vessel containing a precursor composition comprising one or more complexes of the formula:
- [(R1)NC(R2)C(R3)N(R4)]xMLy
- wherein:
- M is a Group IVB, VB, or VIB metal;
- each R1, R2, R3, and R4 is independently H or an organic group;
- each L is independently CO, NO, CN, CS, CNR5, R6CN, or R7, wherein
- each R5, R6, and R7 group is independently an organic group;
- x=1 to 4;
- and
- y=1 to 4.
8 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;
- a vessel containing a precursor composition comprising one or more complexes of the formula:
- [(R1)NC(R2)C(R3)N(R4)]xMLy
- wherein:
- M is a Group IVB, VB, or VIB metal;
- each R1, R2, R3, and R4 is independently H or a organic group;
- each L is independently CO, NO, CN, CS, CNR5, R6CN, or R7, wherein each R5, R6, and R7 group is independently an organic group;
- x=1 to 4;
- and
- y=1 to 4.
7 more elements
A chemical vapor deposition system comprising:
- a deposition chamber having a semiconductor substrate or substrate assembly positioned therein;
- a vessel containing a precursor composition comprising one or more liquid complexes of the formula:
- [(R1)NC(R2)C(R3)N(R4)]xMLy
- wherein:
- M is a Group IVB, VB, or VIB metal;
- each R1, R2, R3, and R4, independently H or a (C1-C30)organic group;
- each L is independently CO, NO, CN, CS, CNR5, R6CN, or R7, wherein each R5, R6, and R7 group is independently an organic group;
- x=1 to 4;
- and
- y=1 to 4.
7 more elements
Dependencies are inferred from the claim text.