Diamond film depositing apparatus and method thereof
AssigneeKorea Institute of Science and Technology
InventorsWook-Seong Lee, Young Joon Baik, Kwang Yong Eun
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Abstract
A diamond film depositing apparatus and method are disclosed in which a uniform and large plasma is formed on a substrate having a diameter of larger than 100 mm without using a heated filament cathode, without applying a magnetic field thereto, and without using a ballast resistance. The thusly formed plasma is maintained stably for a long time, so that a diamond thick film having a diameter of larger than 4 inches and a thickness of over hundreds of μm can be deposited on a flat or curved substrate and also on a Si wafer.
Claims12
A diamond film depositing apparatus comprising:
- a process chamber having a gas inlet for injecting a reactive gas and an exhaust gas outlet for discharging an exhaust gas;
- a cathode disposed at an upper portion inside the process chamber;
- an anode disposed below the cathode for fixing a substrate, the cathode and the anode being concave or convex with respect to each other, or in a disk-type;
- an SMPS(switched-mode power supply) connected to the cathode and the anode, applying a DC voltage to the cathode and anode to form a plasma between the cathode and the anode;
- and a holder for fixing the cathode to the upper inside portion of the process chamber,
- wherein the cathode is fixed by the holder, the holder including
- a central fixing bar disposed at a center of an upper surface of the cathode,
- plural edge fixing bars disposed at an edge of the upper surface of the cathode at regular intervals,
- a rotatable handle fixed to the central fixing bar, and
- a cooling line formed inside the holder,
- wherein rotation of the handle moves the cathode to control temperature of the cathode by varying the degree of thermal contact between the cathode and the holder containing the cooling line therein.
Dependencies are inferred from the claim text.