Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor
AssigneeHeadway Technologies, Inc.
InventorsCheng T. Horng, Mao-Min Chen, Chen-Jung Chien, Cherng-Chyi Han, Ru-Ying Tong, Chyu-Jiuh Torng, Hui-Chuan Wang
Life of this patent
Estimating the term…
Abstract
A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
Claims25
A method for fabricating a longitudinally biased bottom spin valve GMR read sensor having a lead overlay configuration and narrow trackwidth comprising:
- providing a substrate;
- forming on the substrate a bottom spin valve stack, said stack having a barrier layer capped by a bilayer formed of an upper layer and a lower layer and said stack being bounded laterally by edges;
- annealing said stack with a first anneal;
- forming a longitudinal bias layer of permanent magnetic material contiguous to said stack edges;
- forming a second capping layer on said bias layer;
- forming a blanket conducting lead overlay layer (LOL) over said stack and capped bias layer;
- annealing said LOL blanketed stack and bias layer with a second anneal;
- forming an opening within a central portion of said lead overlay layer (LOL), the lateral dimension of said opening defining a physical trackwidth and the opening extending vertically through the LOL and the upper layer of the capping bilayer and reaching at least to the upper surface of the lower layer of said capping bilayer but not reaching the lower surface of said lower layer and the remaining thickness of said lower layer being oxidized thereby to form a specularly reflecting layer.
The method of claim 11 wherein the CoFe layer is formed to a thickness of between approximately 5 and 15 angstroms and the NiFe layer is formed to a thickness of between approximately 15 and 30 angstroms.
Dependencies are inferred from the claim text.