Distributed bragg reflector laser and fabrication method
AssigneeLucent Technologies Inc.
InventorKishmore K. Kamath
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Abstract
A distributed Bragg reflector laser is fabricated wherein material defects are produced in the laser's tuning waveguide region. The defects may be created by introducing impurities into the region. The defects increase the non-radiative recombination rate of injected carriers, thereby decreasing FM efficiency and improving RF performance. Injected carrier electrons are substantially separated from injected carrier holes to reduce bimolecular and Auger recombination rates, thus improving tuning range.
Claims18
A distributed Bragg reflector laser comprising:
- a waveguide region having material defects therein;
- the waveguide region having charge carriers comprising electrons and holes;
- and
- wherein the carrier electrons are substantially separated from the carrier holes.
An integrated circuit comprising a distributed Bragg reflector laser wherein the laser comprises:
- a waveguide region having material defects therein;
- the waveguide region having charge carriers comprising electrons and holes;
- and
- wherein the carrier electrons are substantially separated from the carrier holes.
Dependencies are inferred from the claim text.