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US 6,785,311 B1Granted
Optical semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorStephen Peter Najda
Life of this patent
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Abstract
An optical semiconductor device comprising: an active region; and a p-doped cladding region disposed on one side of the active region; wherein an electron-reflecting barrier is provided on the p-side of the active region for reflecting both Γ-electrons and X-electrons, the electron-reflecting barrier providing a greater potential barrier to Γ-electrons than the p-doped cladding region.
Claims23
An optical semiconductor device comprising:
- an active region;
- and
- a p-doped cladding region disposed on one side of the active region;
- wherein an electron-reflecting barrier is provided between the cladding region and the active region for reflecting both Γ-electrons and X-electrons, the electron-reflecting barrier providing a greater potential barrier to Γ-electrons than the p-doped cladding region,
- wherein the electron-reflecting barrier comprises a first electron-reflecting layer for reflecting Γ-electrons and a second electron-reflecting layer for reflecting X-electrons.
2 more elements
An optical semiconductor device comprising:
- an optical guiding region;
- an active region having at least one energy well, said active region being disposed in said optical guiding region;
- and
- n-doped and p-doped cladding regions disposed on opposite sides of the optical guiding region;
- wherein an electron-reflecting layer for reflecting Γ-electrons is provided between the p-doped cladding region and the active region;
- and
- wherein the electron-reflecting layer contacts with the optical guiding region so that the Γ-conduction band of the optical guiding region is substantially degenerate with the X-conduction band of the electron-reflecting layer, and
- the electron-reflecting layer is formed of AlP.
5 more elements
Dependencies are inferred from the claim text.