Method of providing stability of a magnetic memory cell
AssigneeHewlett-Packard Development Company, L.P.
InventorsManish Sharma, Manoj K. Bhattacharyya
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Abstract
The invention includes a method of providing magnetic stability of a memory cell. The memory cell is generally located proximate to a conductive line, and proximate to a write mechanism that can set a magnetic state of the memory cell. The method includes receiving a representation of a maximum magnetic field intensity available from the write mechanism. A desirable placement of the memory cell relative to the conductive line can be generated for providing stability of the memory cell, while still allowing the write mechanism to change the magnetic state of the memory cell.
Claims20
A method of providing magnetic stability of a memory cell, the memory cell being located proximate to a first conductive line, and proximate to a second conductive line that can set a magnetic state of the memory cell, the method comprising:
- receiving a representation of a maximum magnetic field intensity available from the second conductive line;
- generating a desirable placement of the memory cell relative to the first conductive line, for providing stability of the memory cell, while still allowing the second conductive line to change the magnetic state of the memory cell.
An apparatus for providing magnetic stability of a memory cell, the memory cell being located proximate to a first conductive line, and proximate to a second conductive line that can set a magnetic state of the memory cell, the apparatus comprising:
- means for receiving a representation of a maximum magnetic field intensity available from the second conductive line;
- means for generating a desirable placement of the memory cell relative to the first conductive line, for providing stability of the memory cell, while still allowing the second conductive line to change the magnetic state of the memory cell.
A computer program product for providing magnetic stability of a memory cell, the computer program product comprising a computer usable medium having readable program means for causing a computer to perform the acts of:
- receiving a representation of a maximum magnetic field intensity available from a second conductive line;
- generating a desirable placement of the memory cell relative to a first conductive line, for providing stability of the memory cell, while still allowing the second conductive line to change the magnetic state of the memory cell.
Dependencies are inferred from the claim text.