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US 6,785,123 B2Granted
High surface area porous aluminum electrode in electrolytic capacitors using solid freeform fabrication
AssigneeIntel Corporation
InventorMilan Keser
Life of this patent
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Abstract
A porous aluminum anode is used in a capacitor. The porous anode is constructed by a solid freeform fabrication (SFF) process and has a plurality of pores. Each of the plurality of pores has a pore size. An electrolyte is infiltrated in the plurality of pores. An oxide layer is formed on the aluminum surface to provide a dielectric for the capacitor.
Claims10
A capacitor element comprising:
- a porous aluminum anode having a porous volume for use in a capacitor, the porous aluminum anode being constructed by a solid freeform fabrication (SFF) process and having a plurality of pores formed by sintered aluminum powder, each of the plurality of pores having a pore size;
- and
- an electrolyte infiltrated in the plurality of pores;
- an oxide layer formed on the porous aluminum anode to provide a dielectric for the capacitor.
1 more element
A capacitor comprising:
- a termination assembly to provide connections;
- and
- a capacitor element coupled to the termination assembly, the capacitor element comprising:
- a porous aluminum anode having a porous volume, the porous aluminum anode being constructed by a solid freeform fabrication (SFF) process and having a plurality of pores formed by sintered aluminum powder, each of the plurality of pores having a pore size,
- an electrolyte infiltrated in the plurality of pores, and
- an oxide layer formed on the porous aluminum anode to provide a dielectric for the capacitor.
3 more elements
Dependencies are inferred from the claim text.