Methods of forming hafnium-containing materials, methods of forming hafnium oxide, and capacitor constructions comprising hafnium oxide

A method for forming hafnium oxide, comprising:

• providing a semiconductor substrate;
• forming first hafnium oxide-containing material over the substrate, the first hafnium oxide-containing material predominately having a tetragonal crystallographic orientation;
• forming second hafnium oxide-containing material over the first hafnium oxide-containing material, the second hafnium oxide-containing material being substantially amorphous;
• and
• utilizing the first hafnium oxide-containing material to induce the tetragonal crystallographic orientation in the second hafnium oxide-containing material.

A method of forming hafnium oxide, comprising:

• providing a semiconductor substrate;
• forming a first hafnium oxide-containing material from a first hafnium-containing precursor utilizing a temperature of greater than or equal to 350° C.;
• and
• forming a second hafnium oxide-containing material directly against the first hafnium oxide-containing material from a second hafnium-containing precursor utilizing a temperature of less than or equal to 250° C.

A capacitor construction, comprising:

• a semiconductor substrate;
• a first capacitor electrode over the semiconductor substrate;
• a second capacitor electrode over the first capacitor electrode;
• and
• a dielectric material between the first and second capacitor electrodes;
• an entirety of the dielectric material between the first and secondelectrodes consisting essentially of crystalline hafnium oxide having a non-monoclinic crystallographic orientation.