Method of using high yielding spectra scatterometry measurements to control semiconductor manufacturing processes, and systems for accomplishing same

A method, comprising:

• providing a library comprised of at least one target optical characteristic trace of a grating structure comprised of a plurality of gate stacks, said target trace corresponding to a semiconductor device having at least one desired electrical performance characteristic;
• providing a silicon substrate having at least one grating structure formed thereabove, said formed grating structure comprised of a plurality of gate stacks;
• illuminating said at least one grating structure formed above said substrate;
• measuring light reflected off of said at least one grating structure formed above said substrate to generate an optical characteristic trace for said formed grating structure;
• comparing said generated optical characteristic trace to said target trace;
• and
• adjusting at least one parameter of at least one process used to form a gate stack on a subsequently processed wafer based upon said comparison of said generated trace and said target trace.

A method, comprising:

• providing a library comprised of at least one target optical characteristic trace of a grating structure comprised of a plurality of gate stacks, said target trace corresponding to a semiconductor device having at least one desired electrical performance characteristic;
• providing a silicon substrate having at least one grating structure formed thereabove, said formed grating structure comprised of a plurality of gate stacks;
• illuminating said at least one grating structure formed above said substrate;
• measuring light reflected off of said at least one grating structure formed above said substrate to generate an optical characteristic trace for said formed grating structure;
• comparing said generated optical characteristic trace to said target trace;
• and
• adjusting at least one parameter of at least one process operation to be performed on said provided substrate based upon a deviation between said generated trace and said target trace.