Amplifier circuit

An amplifier circuit comprising:

• a bias input node;
• a signal input node;
• a signal output node;
• and
• a plurality of amplifier cells each including:
• a plurality of discrete emitter contacts of a first conductivity type,
• a plurality of discrete base contacts of a second conductivity type and grouped in two or more groups,
• a base capacitor for each group, each base capacitor having two electrodes, an input electrode coupled to said signal input node, and an output electrode coupled to a group of discrete base contacts, and
• a base resistor for each group, each base resistor having an input coupled to the bias input node and an output coupled to a group of discrete base contacts.

An amplifier circuit comprising:

• a bias input node;
• a signal input node;
• a signal output node;
• and
• a plurality of amplifier cells each including:
• a plurality of discrete emitter contacts of a first conductivity type,
• a plurality of discrete base contacts of a second conductivity type and grouped in two or more groups and coupled to the signal input node,
• at least one collector contact of the first conductivity type coupled to the signal output node, and
• a base resistor for each group, each base resistor having an input coupled to the bias input node and an output coupled to a group of discrete base contacts.

An amplifier cell comprising:

• a plurality of discrete emitter contacts of a first conductivity type;
• a plurality of discrete base contacts of a second conductivity type and grouped in two or more groups;
• at least one collector contact of the first conductivity type;
• a base capacitor for each group, each base capacitor having two electrodes, an input electrode coupled to a signal input node and an output electrode coupled to a group of discrete base contacts;
• a base resistor for each group, each base resistor having an input coupled to a bias input node and an output coupled to a group of discrete base contacts;
• and
• an emitter resistor coupled to each discrete emitter contact.

An amplifier circuit fabrication method comprising:

• providing a bias input node;
• providing an RF input node;
• providing an RF output node;
• and
• forming a plurality of amplifier cells to each include:
• a plurality of discrete emitter contacts of a first conductivity type,
• a plurality of discrete base contacts of a second conductivity type grouped in two or more groups,
• at least one collector contact of the first conductivity type connected to the RF output node,
• a base capacitor for each group, each base capacitor having two electrodes, an input electrode coupled to said RF input node, and an output electrode coupled to a group of discrete base contacts,
• a base resistor for each group, each base resistor having an input coupled to the bias input node and an output coupled to a group of discrete base contacts, and
• an emitter resistor coupled to each discrete emitter contact to provide more effective ballasting and thermal stability than with a parallel arrangement of HBT transistors.

An amplifier circuit fabrication method comprising:

• providing a bias input node;
• providing a signal input node;
• providing a signal output node;
• and
• forming a plurality of amplifier cells to each include:
• a plurality of discrete emitter contacts of a first conductivity type,
• a plurality of discrete base contacts of a second conductivity type grouped in two or more groups,
• a base capacitor for each group, each base capacitor having two electrodes, an input electrode coupled to said signal input node, and an output electrode coupled to a group of discrete base contacts, and
• a base resistor for each group, each base resistor having an input coupled to the bias input node and an output coupled to a group of discrete base contacts.

An amplifier circuit fabrication method comprising:

• providing a bias input node;
• providing a signal input node;
• providing a signal output node;
• and
• forming a plurality of amplifier cells to each include:
• a plurality of discrete emitter contacts of a first conductivity type,
• a plurality of discrete base contacts of a second conductivity type grouped in two or more groups and coupled to the signal input node,
• at least one collector contact of the first conductivity type coupled to the signal output node, and
• a base resistor for each group, each base resistor having an input coupled to the bias input node and an output coupled to a group of discrete base contacts.

An amplifier cell fabrication method comprising:

• forming a plurality of discrete emitter contacts of a first conductivity type;
• forming a plurality of discrete base contacts of a second conductivity type grouped in two or more groups;
• forming at least one collector contact of the first conductivity type;
• forming a base capacitor for each group, each base capacitor having two electrodes, an input electrode coupled to a signal input node and an output electrode coupled to a group of discrete base contacts;
• forming a base resistor for each group, each base resistor having an input coupled to a bias input node and an output coupled to a group of discrete base contacts;
• and
• forming an emitter resistor coupled to each discrete emitter contact.