Semiconductor device including a diffusion layer formed between electrode portions
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYoshifumi Nakamura, Ryuichi Sahara, Nozomi Shimoishizaka, Kazuyuki Kainou, Keiji Miki, Kazumi Watase, Yasutake Yaguchi
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Abstract
The semiconductor device includes a semiconductor element having an electrode formed on a surface thereof, and a metal wiring formed on the surface of the semiconductor element and electrically connected to the electrode. The metal wiring has an external electrode portion functioning as an external electrode. A thickness of the external electrode portion is greater than that of a non-electrode portion of the metal wiring, i.e., a portion of the metal wiring other than the external electrode portion.
Claims8
A semiconductor device, comprising:
- a semiconductor element;
- and
- a first electrode portion formed on the semiconductor element,
- wherein said first electrode portion has a thickness in the range of 10 μm to 20 μm.
Dependencies are inferred from the claim text.