Semiconductor device and manufacturing method thereof

A semiconductor device has a structure comprising:

• a build-up substrate in which 1 to 4 build-up layers each including an organic insulation layer, Cu plating wiring and a via hole are formed on both surfaces of an organic wiring substrate having a through hole and a both-side wiring pattern, and electroless Ni/Au or electroless Ni/Pd/Au plating with an Au thickness of 0.005 to 0.3 μm is applied to a terminal surface to be connected with a semiconductor chip;
• and a semiconductor chip formed with Au bumps on connection electrodes of a bear chip or connection electrodes on a re-wiring layer disposed on a chip surface;
• wherein the Au bump is flip-chip connected to the Au plating surface by Au—Au metal bonding, a gap between the substrate and the chip is filled with a resin containing an inorganic insulation filler, and solder bumps are formed by reflow on external connection terminals on the rear face of the build-up substrate.

A semiconductor device in which a semiconductor chip is mounted on a wiring substrate by flip-chip connection by solid phase metal bonding between noble metals to each other,

• wherein a metal surface of a semiconductor chip connection terminal on the wiring substrate comprises an Ni/Au or Ni/Pd/Au plating layer, the total thickness of the noble metal portion of Au or Pd/Au is 0.005 to 0.3 μm, the semiconductor chip comprises an electronic circuit forming area and an electrode pad area on an Si substrate, a re-wiring layer is formed on the surface while interposing an organic insulation layer with a thickness of 2 μm or more, a connection pad of the re-wiring layer connected electrically with the electrode pad comprises a multi-layered metal structure of Cu/barrier metal/Au with the total thickness of 2 μm or more, an Au bump is formed on the connection pad, the Au bump and the Au plating surface are flip-chip connected to each other by Au/Au metal bonding, a gap between the substrate and the semiconductor chip is filled with a resin containing an inorganic filler, and a solder bump is formed by reflow on an external connection terminal on the rear face of the wiring substrate.

A semiconductor device in which a semiconductor chip is mounted on a wiring substrate by flip-chip connection by solid phase metal bonding between noble metals to each other,

• wherein a metal surface of a semiconductor chip connection terminal on the wiring substrate comprises an Ni/Au or Ni/Pd/Au plating layer, the total thickness of a noble metal portion of Au or Pd/Au is 0.005 to 0.3 μm, the semiconductor chip comprises an electronic circuit area having Cu wiring on a Si substrate and a Cu electrode pad area on the Si substrate, Au or Al metallizing treatment is applied by way of a barrier layer to the outermost surface of the Cu electrode pad area, an Au stud bump or a plating bump is formed further thereon, the Au bump is flip-chip connected to the Au plating surface by Au—Au metal bonding, a gap between the substrate and the semiconductor chip is filled with a resin containing an inorganic insulation filler, and a solder bump is formed on an external connection terminal on the rear face of the wiring substrate.